2SC2336

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ・With TO-220 package ・Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC2336 VCBO Collector-base voltage 2SC2336A 2SC2336B 2SC2336 VCEO Collector-emitter voltage 2SC2336A 2SC2336B VEBO IC ICM PT Emitter-base voltage Collector current Collector current-peak Ta=25℃ Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open collector Open base Open emitter CONDITIONS VALUE 180 200 250 180 200 250 5 1.5 3.0 1.5 W V A A V V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency 2SC2336 2SC2336A 2SC2336B CONDITIONS IC=0.5A; IB=50mA IC=0.5A ;IB=50mA VCB=150V; IE=0 VEB=3V; IC=0 IC=5mA ; VCE=5V IC=150mA ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=100mA ; VCE=10V MIN TYP. MAX 1.0 1.5 1 1 UNIT V V μA μA 30 60 30 95 320 pF MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2336 2SC2336A 2SC2336B Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B 5