2SC2351

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 70 mA PC 0.25 W TJ 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2351 TYP. MAX UNIT μA μA ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 IEBO Emitter Cutoff Current VEB= 2.0V; IC= 0 0.1 hFE DC Current Gain IC= 20mA ; VCE= 10V 40 200 fT COB ︱S21e︱2 NF Current-Gain—Bandwidth Product IC= 20mA;VCE= 10V IE= 0 ; VCB= 10V; f= 1MHz 4.5 GHz Output Capacitance 0.75 1.0 pF Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9 11 dB Noise Figure IC= 5mA ; VCE= 10V;f= 1.0GHz 1.5 3.0 dB MAG Maximum Available Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 14 dB hFE Classification Class Marking hFE E/P R2 40-120 F/Q R3 100-200 isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 isc Website：www.iscsemi.cn