2SC2371

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION ・With TO-126 package ・High Voltage ・High frequency APPLICATIONS ・For TV chroma output and vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -40~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 6 0.1 0.2 1.25 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC2371 MAX UNIT VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3m A 1.5 V VBE Base-emitter on voltage IC=10mA ; VCE=10V IC=100μA;IE=0 1.2 V V(BR)CBO Collector-base breakdown voltage 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 IE=100μA; IC=0 300 V V(BR)EBO Emitter-base breakdown voltage 6 V hFE DC current gain IC=10mA ; VCE=10V 40 250 μA μA ICBO Collector cut-off current VCB=200V; IE=0 0.1 IEBO Emitter cut-off current VEB=4V; IC=0 0.1 COB Output capacitance IE=0; VCB=30V;f=1MHz 3 pF fT Transition frequency IE=10mA ; VCB=30V 50 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2371 Fig.2 outline dimensions 3