2SC2414

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2414 DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 4 A PC 70 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2414 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;L= 25mH 400 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V Collector Cutoff Current VCB= 500V; IE= 0 VEB= 5V; IC= 0 0.1 mA Emitter Cutoff Current 0.1 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 15 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 11 MHz Switching Times , Resistive Load μs μs μs ton tstg tf Turn-On Time 1 Storage Time IC= 1A ;IB1= -IB2= 0.2A 3 Fall Time 1 isc Website：www.iscsemi.cn