2SC2481

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2481 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V(Min) ·High Current Capability ·High Collector Power Dissipation ·Complement to Type 2SA1021 APPLICATIONS ·Color TV vertical deflection output applications. ·Color TV class B sound output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ 1.0 A 20 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2481 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA 1.5 V VBE(on) Base-Emitter On Voltage IC= 5mA; VCE= 5V 0.8 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 μA hFE DC Current Gain IC= 0.2A; VCE= 5V 60 320 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V 20 100 MHz COB Output Capacitance IE= 0; VCB= 10V, ftest= 1MHz 13 pF hFE Classifications R 60-120 O 100-200 Y 160-320 isc Website：www.iscsemi.cn 2