2SC2484

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2484 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·High Power Dissipation ·Complement to Type 2SA1060 APPLICATIONS ·Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 8 A PC 60 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 30mA; IB= 0 IC= 3A; IB= 0.3A B 2SC2484 MIN 80 TYP. MAX UNIT V 2.0 1.8 50 50 20 40 20 20 220 V V μA μA IC= 3A; VCE= 5V VCB= 80V; IE= 0 VEB= 3V; IC= 0 IC= 20mA ; VCE= 5V IC= 1A ; VCE= 5V IC= 3A; VCE= 5V IC= 0.5A; VCE= 5V MHz hFE-2 Classifications R 40-80 Q 60-120 P 100-200 isc Website：www.iscsemi.cn 2