2SC2486

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2486 DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1062 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector MAX 120 120 5 7 12 80 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=25mA ;IB=0 IC=5A; IB=0.5A IC=5A;VCE=5V VCB=120V; IE=0 VEB=3V; IC=0 IC=0.02A ; VCE=5V IC=1A ; VCE=5V IC=5A ; VCE=5V IC=0.5A ; VCE=5V 20 40 20 20 MIN 120 TYP. 2SC2486 MAX UNIT V 2.0 1.8 50 50 V V μA μA 200 MHz hFE-2 Classifications R 40-80 Q 60-120 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2486 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3