2SC2497

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION ・With TO-126 package ・Complement to type 2SA1096/A ・High collector to emitter voltage VCEO APPLICATIONS ・For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO PARAMETER Collector-base voltage 2SC2497 VCEO Collector- emitter voltage 2SC2497A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Open collector Open base 60 5 1.5 3 1.2*1 PD Total power dissipation TC=25℃ 5* Tj Tstg Junction temperature Storage temperature 2 CONDITIONS Open emitter VALUE UNIT V 70 50 V V A A W 150 -55～+150 ℃ ℃ Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC2497 IC=2mA ; IB=0 2SC2497A V(BR)CBO VCEsat VBEsat ICEO ICBO IEBO hFE COB fT Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency IC=1mA ;IE=0 IC=1.5A ;IB=0.15A IC=1.5A ;IB=0.15A VCE=10V; IB=0 VCB=20V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=20V,f=1MHz CONDITIONS 2SC2497 2SC2497A MIN 50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 60 70 1.0 1.5 100 1 10 80 35 150 220 pF MHz V V V μA μA μA IE=0.5A ; VCB=5V,f=200MHz hFE Classifications R 80-160 S 120-220 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2497 2SC2497A Fig.2 Outline dimensions 3