2SC2517

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PT Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 150 100 12 5 10 2.5 1.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2517 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ; IB=0;L=1mH 100 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 0.6 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.3A 1.5 V μA μA mA μA ICBO Collector cut-off current VCB=100V ;IE=0 VCE=100V; VBE=-1.5V Ta=125℃ VEB=10V ;IC=0 10 10 1 10 ICEX Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain IC=0.2 A ; VCE=5V 40 hFE-2 DC current gain IC=2 A ; VCE=5V 40 200 Switching times μs μs μs ton Turn-on time IC=3A; IB1=-IB2=0.3A RL=17Ω; VCC=50V 0.5 ts Storage time 2.5 tf Fall time 0.5 hFE-2 Classifications M 40-80 L 60-120 K 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2517 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3