2SC2523

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2523 DESCRIPTION ·With TO-3 package ·Complement to type 2SA1073 ·Wide area of safe operation APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching regulators ·DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Fig.1 simplified outline (TO-3) and symbol Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 160 7 12 120 150 -65~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE=∞ IC=50μA ;IE=0 IE=50μA ;IC=0 IC=5A ;IB=0.5A IC=5A ; VCE=5V VCB=160V; IE=0 VCE=160V; RBE=∞ VEB=7V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=10V;f=10MHz 60 40 MIN 160 160 7 2SC2523 TYP. MAX UNIT V V V 1.8 1.7 50 1 50 200 V V μA mA μA 300 50 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2523 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3