2SC2527

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2527 DESCRIPTION ・With TO-220C package ・Complement to type 2SA1077 ・Fast switching speed ・Excellent safe operating area APPLICATIONS ・High frequency power amplifiers ・Audio power amplifiers ・Switching regulators ・DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 120 120 7 10 60 150 -65~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO IEBO hFE-1 hFE -2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA ; RBE=∞ IC=50μA ; IE=0 IE=50μA ; IC=0 IC=5A; IB=0.5A IC=5 A ; VCE=5V VCB=120V ;IE=0 VCE=120V; IB=0 VEB=7V ;IC=0 IC=1 A ; VCE=5V IC=5 A ; VCE=5V IC=1 A ; VCE=10V IE=0 ; VCB=10V; f=1MHz 60 40 MIN 120 120 7 2SC2527 TYP. MAX UNIT V V V 1.8 1.7 50 1 50 200 V V μA mA μA 80 180 MHz pF Switching times tr ts tf Rise time Storage time Fall time IC=7.5 A; RL=4Ω IB1=-IB2=0.75A 0.3 1.3 0.2 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2527 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3