2SC2534

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V(Min) ・Excellent switching time : tr=1.0μs(Max.) : tf=1.0μs(Max. APPLICATIONS ・High speed high voltage switching applications ・Switching regulator applications ・High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2534 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 6 2 0.5 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=400V ;IE=0 VEB=6V; IC=0 IC=0.1A ; VCE=5V IC=0.5A ; VCE=5V 20 20 MIN 400 500 6 2SC2534 TYP. MAX UNIT V V V 1.0 1.5 100 1 V V μA mA Switching times tr tstg tf Rise time Storage time Fall time VCC=200V; IB1=-IB2=50mA;RL=400Ω Duty cycle≤1% 1.0 2.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2534 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2534 4