2SC2535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High collector breakdown voltage : VCEO=400V(Min) ・Excellent switching time : tr=1.0μs(Max.) : tf=1.0μs(Max. APPLICATIONS ・High speed high voltage switching applications ・Switching regulator applications ・High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2535 ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 6 5 1 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=400V ;IE=0 VEB=6V; IC=0 IC=3A ; VCE=5V 10 MIN 400 500 TYP. 2SC2535 MAX UNIT V V 1.0 1.5 100 1 V V μA mA Switching times tr tstg tf Rise time Storage time Fall time VCC=200V; IB1=-IB2=0.3A;RL=68Ω Duty cycle≤1% 1.0 2.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2535 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2535 4