2SC2555

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High collector breakdown voltage VCEO=400V(Min) ・Excellent switching times : tr=1.0μs(Max.) tf=1.0μs(Max.)@ IC=4A APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC2555 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 80 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 8 10 4 2.5 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector -emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 15 10 MIN 400 500 TYP. 2SC2555 MAX UNIT V V 1.0 1.5 100 1.0 V V μA mA Switching times tr tstg tf Rise time Storage time Fall time VCC≈200V; IC=4A IB1=-IB2=0.4A RL=50Ω 1.0 2.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2555 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2555 4