2SC2556

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2556 2SC2556A DESCRIPTION ・With TO-126 package ・High VCBO ・Low collector saturation voltage ・High transition frequency APPLICATIONS ・Audio frequency output amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC2556 VCBO Collector-base voltage 2SC2556A 2SC2556 VCEO Collector- emitter voltage 2SC2556A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector 50 5 1 1.5 1.2 150 -55～+150 V A A W ℃ ℃ 180 40 V CONDITIONS VALUE 130 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2556 2SC2556A MIN TYP. MAX UNIT 2SC2556 V(BR)CEO Collector-emitter breakdown voltage 2SC2556A IC=2mA ;IB=0 40 V 50 2SC2556 V(BR)CBO Collector-base breakdown voltage 2SC2556A IE=10μA ;IC=0 IC=10μA ;IE=0 130 V 180 V(BR)EBO Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA 0.5 V μA ICBO Collector cut-off current VCB=120V; IE=0 0.1 hFE-1 DC current gain IC=1A ; VCE=0.5V 150 350 hFE-2 DC current gain IC=0.5A ; VCE=2V 150 COB Output capacitance IE=0; VCB=20V;f=1MHz 30 pF fT Transition frequency IC=50mA ; VCE=10V 200 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2556 2SC2556A Fig.2 Outline dimensions 3