2SC2562

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 50 5 5 1 25 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE –1 hFE -2 fT Cob PARAMETER Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.15A IC=3A; IB=0.15A VCB=50V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IC=1A ; VCE=4V f=1MHz ; VCB=10V 70 30 120 80 MIN 50 TYP. 2SC2562 MAX UNIT V 0.4 1.2 1 1 240 V V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=3A ;IB1=- IB2=0.15A RL=10Ω,VCC=30V 0.1 1.0 0.1 μs μs μs hFE-1 Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2562 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2562 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2562 5