2SC2564

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2564 DESCRIPTION ・With MT-200 package ・Complement to type 2SA1094 ・High transition frequency APPLICATIONS ・For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 12 1.2 150 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A; IB=0.5 A IC=5A ; VCE=5V VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=10V 55 40 80 MIN 140 5 TYP. 2SC2564 MAX UNIT V V 2.0 2.0 50 50 240 V V μA μA MHz hFE-1 classifications R 55-110 O 80-160 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2564 Fig.2 Outline dimensions 3