2SC2570A

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION ·Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA ·Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 15 mA APPLICATIONS ·Designed for use in low-noise amplifier of VHF ~ UHF stages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 70 mA PC 0.6 W TJ 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2570A TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 15V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 0.1 μA hFE DC Current Gain IC= 20mA ; VCE= 10V 40 200 fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V 5 GHz COB ︱S21e︱2 Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.7 0.9 pF Insertion Power Gain IC= 20mA ; VCE= 10V; f= 1.0GHz 8 10 dB MAG Maximum Available Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 11.5 dB NF Noise Figure IC= 5mA ; VCE= 10V;f= 1.0GHz 1.5 3.0 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2570A isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2570A isc Website：www.iscsemi.cn 4 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50Ω 2SC2570A S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50Ω isc Website：www.iscsemi.cn