2SC2592

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION ・With TO-220 package ・Complement to type 2SA1111/1112 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC2591 VCBO Collector-base voltage 2SC2592 2SC2591 VCEO Collector-emitter voltage 2SC2592 VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 180 5 1 1.5 20 150 -55~150 V A A W ℃ ℃ Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SC2591 IC=0.1mA ,IB=0 2SC2592 VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=10μA ,IC=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCE=10V CONDITIONS 2SC2591 2SC2592 MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 5 0.5 1.0 2.0 2.0 1 1 90 50 20 200 pF MHz 330 V V V μA μA hFE-1 Classifications Q 90-155 R 130-220 S 185-330 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2591 2SC2592 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 4