2SC2611

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2611 DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For high voltage amplifier TV video output applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Ta=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.1 1.25 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) ICEO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=1mA;RBE=∞ IC=10μA; IE=0 IE=10μA; IC=0 IC=20mA; IB=2mA VCE=250V; RBE=∞ IC=20mA ; VCE=20V IC=20mA ; VCE=20V IE=0 ; VCB=20V;f=1MHz 30 50 80 MIN 300 300 5 2SC2611 TYP. MAX UNIT V V V 1.5 1.0 200 V μA MHz 4.0 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2611 Fig.2 Outline dimensions 3