2SC2612

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 3 6 1.5 30 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,RBE=∞,L=100mH IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=400V; IE=0 VCE=350V; RBE=∞ IC=1.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 400 7 TYP. 2SC2612 MAX UNIT V V 1.0 1.5 100 100 V V μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=3.0A IB1=- IB2=0.6A VCC≈150V 1.2 1.0 2.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2612 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 4