2SC2616

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2616 DESCRIPTION ·High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 5 A PC 100 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2616 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustainig Voltage IC= 0.2A; RBE= ∞; L= 100mH IC= 5A; IB1=-IB2= 1A, VBE= -5V; L=180μH,clamped IC= 5A; IB= 1A B 400 V VCEX(SUS) Collector-Emitter Sustainig Voltage 400 V VCE(sat) Collector-Emitter Saturation Voltage 1.2 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.7 V hFE-1 DC Current Gain IC= 5A; VCE= 5V 15 hFE-2 DC Current Gain IC= 10A; VCE= 5V 7 ICBO Collector Cutoff Current VCB= 400V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 350V; RBE= ∞ 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA Switching Times tr Rise Time IC= 10A; IB1= -IB2= 2A, VCC≈ 150V 1.0 μs tstg Storage Time 2.5 μs tf Fall Time 1.0 μs isc Website：www.iscsemi.cn