2SC2625

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2625 DESCRIPTION ・With TO-3PN package ・High voltage,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 450 400 7 10 3 80 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.55 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1A ;IB=0 IC=1mA ;IE=0 IE=0.1mA ;IC=0 IC=4A; IB=0.8A IC=4A ;IB=0.8A VCB=450V IE=0 VEB=7V; IC=0 IC=4A ; VCE=5V 10 MIN 400 400 450 7 2SC2625 TYP. MAX UNIT V V V V 1.2 1.5 1.0 0.1 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=7.5A; IB1=-IB2=1.5A RL=20Ω,Pw=20μs Duty≤2% 1.0 2.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2625 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2625 4