2SC2658

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 10 A PC 90 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 0.2A ; L= 25mH IC= 3A; IB= 0.6A B 2SC2658 MIN 500 TYP. MAX UNIT V 1.0 1.5 0.1 0.1 15 8 3 V V mA mA IC= 3A; IB= 0.6A B VCB= 800V;IE= 0 VEB= 5V; IC= 0 IC= 0.1A ; VCE= 5V IC= 3A ; VCE= 5V IC= 0.5A; VCE= 10V MHz Switching Times ton tstg tf Turn-On Time Storage Time Fall Time IC= 3A ;IB1= -IB2= 0.6A 1 3 1 μs μs μs isc Website：www.iscsemi.cn