2SC2682

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2682 DESCRIPTION ・With TO-126 package ・Complement to type 2SA1142 APPLICATIONS ・Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 0.1 1.2 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2682 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 0.12 0.5 V VBEsat ICBO Base-emitter saturation voltage IC=50mA; IB=5mA VCB=180V; IE=0 0.8 1.5 V μA μA Collector cut-off current 1 IEBO Emitter cut-off current VEB=3V; IC=0 1 hFE-1 DC current gain IC=1mA ; VCE=5V 90 190 hFE-2 DC current gain IC=10mA ; VCE=5V 100 200 320 fT Transition frequency IC=20mA ; VCE=10V 200 MHz Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 3.2 pF hFE-2 Classifications Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2682 Fig.2 Outline dimensions 3