2SC2688

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2688 DESCRIPTION ・With TO-126 package ・High breakdown voltage ・High transition frequency APPLICATIONS ・Designed for use in Color TV chroma output circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 5 0.2 1.25 W UNIT V V V A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2688 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA 1.5 V V(BR)CEO ICBO Collector-emitter breakdown voltage IC=1mA; IB=0 VCB=200V; IE=0 300 V μA μA Collector cut-off current 0.1 IEBO Emitter cut-off current VEB=5V; IC=0 0.1 hFE DC current gain IC=10mA ; VCE=10V 40 250 fT Transition frequency IC=10mA ; VCE=30V 40 MHz Cre Feedback capacitance IE=0 ; VCB=10V;f=1MHz 3.0 pF hFE Classifications N 40-80 M 60-120 L 100-200 K 160-250 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2688 Fig.2 Outline dimensions 3