2SC2690

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A DESCRIPTION ・With TO-126 package ・Complement to type 2SA1220/1220A APPLICATIONS ・For use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base ・ Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER 2SC2690 VCBO Collector-base voltage 2SC2690A 2SC2690 VCEO Collector-emitter voltage 2SC2690A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-Peak Base current Ta=25℃ PD Total power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55～+150 ℃ ℃ Open collector Open base 160 5 1.2 2.5 0.3 1.2 W Open emitter 160 120 V V V A A A CONDITIONS VALUE 120 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1A; IB=0.2A IC=1A ;IB=0.2A VCB=120V; IE=0 VEB=3V; IC=0 IC=5mA ; VCE=5V IC=0.3A ; VCE=5V IE=0 ; VCB=10V f=1MHz IC=0.2A ; VCE=5V 2SC2690 2SC2690A MIN TYP. MAX 0.7 1.3 1 1 UNIT V V μA μA 35 60 19 155 320 pF MHz hFE-2 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2690 2SC2690A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A 4