2SC2716

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION ·High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V ICM Collector Current Collector Power Dissipation @TC=25℃ 6 A 20 W PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 1.7 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2716 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 25V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 20 180 PO Output Power VCC= 12V;Pin= 1W, f=27MHz 16 18 W η Power Efficiency 60 70 % isc Website：www.iscsemi.cn