2SC2751

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 DESCRIPTION ・With TO-3N package ・High voltage ,high speed APPLICATIONS ・For use in high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 30 7.5 120 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=10A ;IB=2A; L=50μH IC=10A ;IB=2A IC=10A ;IB=2A VCB=400V; IE=0 VCE=400V; VBE(off)=-1.5V Ta=125℃ VEB=5V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IC=10A ; VCE=5V 15 10 7 MIN 400 2SC2751 TYP. MAX UNIT V 1.0 1.5 100 100 1.0 10 80 V V μA μA mA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;IB1=-IB2=2A RL=15Ω; VCC≈150V 1.0 2.5 0.7 μs μs μs hFE-1 Classifications N 15-30 R 20-40 O 30-60 Y 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2751 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3