2SC2752

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2752 DESCRIPTION ・With TO-126 package ・High breakdown voltage ・Low collector saturation voltage APPLICATIONS ・Low power switching regulator ・DC-DC converter ・High voltage switch PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 0.5 1.0 0.25 1.0 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2752 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.3A; IB1=0.06A,L=10mH 400 V VCEsat VBEsat Collector-emitter saturation voltage IC=300mA; IB=60mA IC=300mA; IB=60mA VCE=400V; VBE=-1.5V TC=125℃ VEB=5V; IC=0 1.0 V Base-emitter saturation voltage 1.2 0.01 1.0 10 V ICEX Collector cut-off current mA μA IEBO Emitter cut-off current hFE-1 DC current gain IC=50mA ; VCE=5V 20 80 hFE -2 DC current gain IC=300mA ; VCE=5V 10 Switching times μs μs μs ton Turn-on time IC=300mA; IB1=-IB2=60mA PW≈50μs;VCC≈150V RL=500Ω 1.0 tstg Storage time 2.5 tf Fall time 1.0 hFE-1 Classifications M 20-40 L 30-60 K 40-80 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2752 Fig.2 Outline dimensions 3