2SC2761

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2761 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS MAX 450 400 7 30 6 200 200 -65~200 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A ; IB=0 IC=1m A ; IE=0 IE=1m A ; IC=0 IC=20A; IB=4A IC=20A; IB=4A VCB=450V IE=0 VEB=7V; IC=0 IC=15A ; VCE=2V 8 MIN 400 450 7 TYP. 2SC2761 MAX UNIT V V V 1.5 1.7 100 100 V V μA μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2761 Fig.2 Outline dimensions 3