2SC2769

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2769 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 250 200 200 7 10 5 100 150 -55~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2769 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 200 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 B 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA ; IE= 0 250 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 IC= 2A; IB= 0.8A B 7 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage 0.2 V Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.1 V Collector Cutoff Current VCB= 250V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA hFE DC Current Gain IC= 2A; VCE= 5V 20 60 Switching times μs μs μs ton tstg tf Turn-on Time IC= 6A , IB1= -IB2= 1.2A RL= 10Ω;PW=20μs Duty Cycle≤2% 0.8 Storage Time 2.0 Fall Time 0.5 isc Website：www.iscsemi.cn 2