2SC2773

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2773 DESCRIPTION ・With MT-200 package ・High current capability APPLICATIONS ・For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 200 200 6 15 5 150 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IE=1mA; IC=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IC=0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 MIN 200 6 2SC2773 TYP. MAX UNIT V V 3.0 100 100 180 V μA μA MHz pF 250 hFE classifications O 50-100 P 70-140 Y 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2773 Fig.2 Outline dimensions 3