2SC2792

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High breakdown voltage ・Excellent switching times APPLICATIONS ・Switching regulator and high voltage ・Switching applications ・High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC2792 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 850 800 7 2 4 1 80 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=500mA; IB=50mA IC=500mA; IB=50mA VCB=800V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V 10 MIN 800 850 2SC2792 TYP. MAX UNIT V V 1.0 1.5 100 1.0 V V μA mA Switching times tr tstg tf Rise time Storage time Fall time VCC=400V; 2IB1=-IB2=0.1A; RL=800Ω 1.0 4.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2792 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2792 4