2SC2793

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2793 DESCRIPTION ·With MT-200 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION · ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 5 7 3 100 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=3 A;IB=0.6 A IC=3 A;IB=0.6 A VCB=800V; IE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=3A ; VCE=5V 10 10 MIN 800 900 2SC2793 TYP. MAX UNIT V V 1.0 1.5 100 1 V V μA mA Switching times tr tstg tf Rise time Storage time Fall time VCC=400V ,IC=3A, IB1=0.3A;IB2=-0.8A 1.0 3.5 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2793 Fig.2 Outline dimensions 3