Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2794
DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
·
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 60 5 2 6 25 150 -65~150 UNIT V V V A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2794
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
60
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.1A
0.6
V
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
1.3
V μA
ICBO
Collector cut-off current
VCB=60V; IE=0
100
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE-1
DC current gain
IC=150mA ; VCE=2V
50
hFE-2
DC current gain
IC=1A ; VCE=2V
25
fT
Transition frequency
IC=100mA; VCE=5V
40
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2794
Fig.2 Outline dimensions
3
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