2SC2810

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2810 DESCRIPTION ・With TO-220C package ・High voltage,High speed APPLICATIONS ・For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 7 14 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V ;IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 10 18 MIN 400 500 7 2SC2810 TYP. MAX UNIT V V V 0.5 1.3 10 10 V V μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2810 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3