2SC2815

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2815 DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolut maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 300 250 6 5 40 150 -65~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A ;IB=0.4A IC=4A ;IB=0.4A VCB=300V; IE=0 VEB=6.0V; IC=0 IC=2.5A ; VCE=5V 40 MIN 250 300 6 TYP. 2SC2815 MAX UNIT V V V 1.0 1.2 0.1 0.1 V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2815 Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3