2SC2816

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2816 DESCRIPTION ・With TO-220C package ・High voltage ・High speed APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 5 10 2.5 40 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=0.2A ; RBE=∞;L=100mH MIN 2SC2816 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V μA μA ICBO Collector cut-off current VCB=400V ;IE=0 VCE=350V ; RBE=∞ 50 ICEO Collector cut-off current 50 hFE-1 DC current gain IC=2.5 A ; VCE=5V 15 hFE-2 DC current gain IC=5 A ; VCE=5V 7 Switching times μs μs μs ton Turn-on time IC=5A; IB1=-IB2=1A VCC=150V 0.5 ts Storage time 1.5 tf Fall time 0.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2816 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2816 4