2SC2827

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2827 DESCRIPTION ·With TO-220C package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/7A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 450 6 6 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IE=1mA ; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=500V ;IE=0 VCE=450V ; IB=0 VEB=5V; IC=0 IC=3A ; VCE=2V IC=0.5A ; VCE=10V 10 20 MIN 450 6 2SC2827 TYP. MAX UNIT V V 1.0 1.5 100 100 100 V V μA μA μA MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2827 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3