2SC2833A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2833 2SC2833A DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER 2SC2833 VCBO Collector-base voltage 2SC2833A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 70 150 -55~150 ℃ ℃ Open base Open collector Open emitter 900 500 8 5 10 3 2.5 W V V A A A CONDITIONS VALUE 800 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2833 2SC2833A MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH 500 V VCE(sat) VBE(sat) Collector-emitter saturation voltage IC=3A ;IB=0.6A IC=3A ;IB=0.6A 1.0 V Base-emitter saturation voltage 1.5 V 2SC2833 ICBO Collector cut-off current 2SC2833A VCB=800V; IE=0 0.1 VCB=900V; IE=0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 fT DC current gain IC=3A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 8 Transition frequency 3 MHz Switching times 2SC2833 ton Turn-on time 2SC2833A IC=3.0A; VCC=200V IB1=0.6A ,IB2=-0.6A 2SC2833 tf Fall time 2SC2833A 1.0 μs 1.2 μs ts Storage time 3.0 1.0 μs 1.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2833 2SC2833A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3