2SC2834

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION ・With TO-3PN package ・High speed switching ・High VCBO ・Low collector saturation voltage APPLICATIONS ・For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SC2834 VCBO Collector-base voltage 2SC3834A VCEO VEBO IC ICM IB Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 100 150 -55~150 ℃ ℃ Open base Open collector Open emitter 900 500 8 7 15 4 2.5 W V V A A A CONDITIONS VALUE 800 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2834 2SC2834A MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=5A ;IB=1A IC=5A ;IB=1A 1.0 V Base-emitter saturation voltage 1.5 V 2SC2834 ICBO Collector cut-off current 2SC3834A VCB=800V; IE=0 0.1 VCB=900V; IE=0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 fT DC current gain IC=5A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 8 Transition frequency 3.5 MHz Switching times 2SC2834 ton Turn-on time 2SC2834A IC=5.0A; VCC=200V IB1=1A ,IB2=-1A 2SC2834 tf Fall time 2SC2834A 1.0 μs 1.2 μs ts Storage time 2.5 1.0 μs 1.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2834 2SC2834A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3