2SC2838

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2838 DESCRIPTION ・With MT-200 package ・Fast switching speed ・Wide area of safe operation APPLICATIONS ・For high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters application PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ・ Absolute maximum ratings (Ta=25°C) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 12 120 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2838 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A 1.8 V μA μA ICBO Collector cut-off current VCB=140V; IE=0 50 IEBO Emitter cut-off current VEB=5V; IC=0 50 hFE DC current gain IC=3A ; VCE=4V 60 fT Transition frequency IC=1A ; VCE=10V 70 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2838 Fig.2 Outline dimensions 3