2SC2898

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2898 DESCRIPTION ・With TO-220C package ・High voltage,high speed ・High power switching ・ PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 8 16 4 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR) EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A; L=100mH IE=10mA ;IC=0 IC=4.0A; IB=0.8A(pulse test) IC=4.0A; IB=0.8A(pulse test) VCB=400V; IE=0 VCE=350V; RBE=∞ IC=4A ; VCE=5V(pulse test) IC=8A ; VCE=5V(pulse test) 15 7 MIN 400 7 2SC2898 TYP. MAX UNIT V V 1.0 1.5 50 50 V V μA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=8A, IB1=-IB2=1.6A VCC≈150V μs μs μs 0.8 2.0 0.8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2898 Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2898 4