2SC2899

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 DESCRIPTION ・With TO-126 package ・High voltage,high speed APPLICATIONS ・For high speed and high voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 10 0.5 1.0 0.75 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 ICBO ICEO PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Collector cut-off current CONDITIONS IC=0.1A; RBE=∞,L=100mH IE=10mA; IC=0 IC=250mA; IB=50m A IC=250mA ;IB=50m A IC=250mA ; VCE=5V IC=500mA ; VCE=5V VCB=400V; IE=0 VCE=350V; RBE=∞ 15 7 MIN 400 10 2SC2899 TYP. MAX UNIT V V 1.0 1.5 V V 20 50 μA μA Switching times ton tstg tf Turn-on time Storage time Fall time IC=0.5A; IB1=-IB2=0.1A VCC≈150V 1.0 2.0 1.0 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2899 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2899 4