2SC2922

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2922 DESCRIPTION ・With MT-200 package ・Complement to type 2SA1216 APPLICATIONS ・Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 17 5 200 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=8A IB=0.8A VCB=180V; IE=0 VEB=5V; IC=0 IC=8A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 30 250 50 MIN 180 2SC2922 TYP. MAX UNIT V 2.0 100 100 V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;RL=4Ω IB1=- IB2=1A VCC=40V 0.20 1.30 0.45 μs μs μs hFE classifications O 30-60 Y 50-100 P 70-140 G 90-180 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2922 Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2922 4