2SC2923

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2923 DESCRIPTION ・With TO-202 package ・High VCEO ・Low COB APPLICATIONS ・For color TV chroma output applications PINNING(See Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 15 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 300 300 7 0.1 0.2 1.4 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2923 TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=30mA IB=3m A 1.5 V VBE Base-emitter on voltage IC=30mA ; VCE=10V 1.2 V V(BR)CBO Collector-base breakdown voltage IC=10μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V hFE DC current gain IC=5mA ; VCE=50V 50 250 COB Output capacitance IE=0; VCB=30V;f=1MHz 2.4 pF fT Transition frequency IE=20mA ; VCB=30V 70 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2923 Fig.2 outline dimensions 3