2SC2929

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2929 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VCEO(SUS) VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 400 7 3 1 40 150 -45~150 UNIT V V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2929 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 IC= 1A; IB= 0.2A B 7 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage 0.3 V Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 0.9 V Collector Cutoff Current VCB= 450V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 20 50 Switching times μs μs μs ton tstg tf Turn-on Time IC= 3A, IB1= -IB2= 0.6A RL= 20Ω;PW=20μs Duty Cycle≤2% 1.5 Storage Time 2.0 Fall Time 0.8 isc Website：www.iscsemi.cn 2