2SC2944

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2944 DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching ·High reliability ·Low saturation voltage APPLICATIONS ·Color & B/W TV power supply ·Active power filter ·Industrial use power supply ·General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PN) and symbol Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 250 200 7 15 5 100 150 -55~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C Thermal resistance junction case PARAMETER MAX 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IE=0.1mA ; IC=0 IC=0.1mA ; IE=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=250V; IE=0 VEB=7V; IC=0 IC=2A ; VCE=5V 20 MIN 200 7 250 2SC2944 TYP. MAX UNIT V V V 0.8 1.2 0.1 0.1 80 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=10A; IB1=-IB2=2A RL=5ΩPw=20μs,Duty≤2% 0.8 1.5 0.4 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2944 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3