2SC2965

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2965 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 600 450 7 15 150 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ; RBE=∞ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=10A; IB=2A IC=10A; IB=2A VCB=500V ;IE=0 VEB=5V; IC=0 IC=10A ; VCE=5V IC=2A ; VCE=10V IE=0 ; VCB=10V,f=1MHz 7 28 230 MIN 450 600 7 TYP. 2SC2965 MAX UNIT V V V 1.5 1.5 100 100 20 V V μA μA MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2965 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3